Physique de l`Etat Condensé CEA/Saclay Tunneling and

Physique de l`Etat Condensé CEA/Saclay Tunneling and

Physique de l’Etat Condensé
SPEC – DRECAM – DSM
S97/137
http://www-drecam.cea.fr/spec/articles/S97/137/
CEA/Saclay
Tunneling and interferences in very small GaAs
metal-semiconductor field-effect transistors
W. Poirier, D. Mailly*, M. Sanquer†
Service de Physique de l’Etat Condensé (CNRS/MIPPU/URA 2464), DSM/DRECAM/SPEC
CEA, Saclay, Gif-sur-Yvette, F-91191 Cedex, FRANCE
ABSTRACT
We study the transport through gated GaAs: Si wires of 0.5 micrometer
length in the insulating regime and observe transport via elastic tunneling at very
low temperature. We describe the mean positive magnetoconductance and the
mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely
within one electron model without introducing Coulomb blockade considerations.
PACS numbers: 73.23.b, 74.50.+r, 74.80.Fp
Phys. Rev. B 59, 10856-10863 (1999)
*
†
CNRS-LMM, 196 Av. H. Ravera, 92220 Bagneux, FRANCE
CEA-DSM-DRFMC-SPSMS, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble, FRANCE