TCAD simulations for pixel detectors

TCAD simulations for pixel detectors
Summary:
1) Geometry layout: doping profiles for 2D geometry
(based on minimal assumptions);
2) Preliminary results: electrostatic potential,
potential electric
field distribution, electron mobility;
3) Interpixel capacitance and bulk capacitance with
p
to the bias voltage
g and frequency;
f q
y;
respect
4) Informations we would need… ; Future plans;
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
1
TCAD simulations for pixel detectors
Simulator:
TCAD from SYNOPSIS:
MDRAW (geometry, doping, mesh)
DESSIS (simulator)
TECPLOT_ISE (graphical interface, results visualization)
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
2
TCAD simulations for pixel detectors
1) Geometry layout: doping profiles - 2D geometry
p+ on n type:
t
Bulk: 200 µm
Pixel size : 300 µm
Gap 70 µm
Oxide 4 µm
Nitride 1 µm
Doping: Boron (Gaussian shape with
The peak at top (0 µm) 1e18
at/cm^3
Bulk: Phosphorus 1e12 at/cm
at/cm^3
3
Backplane: Phosphorus 1e18 at/cm^3
Interface charge : 5e10 q/cm^2
Metal contacts with field plates
Pixel Detectors
Rossi,Fisher,Rohe,Wermes
air
nitride
oxide
Gap
P+-implants
Silicon n-type
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
3
TCAD simulations for pixel detectors
1) Geometry layout: doping profiles - 2D geometry
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
444
TCAD simulations for pixel detectors
Bias 200V
Electrostatic potential
potential, electric field distribution
distribution,
electron mobility.
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
5
TCAD simulations for pixel detectors
electron mobility.
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
6
TCAD simulations for pixel detectors
Interpixel capacitance and bulk capacitance
. with respect to the bias voltage (1 MHZ)
Distance between pixels :70 µm (pixel 300 x 300 µm^2)
Surface charge 5e10 q/cm^2
Bulk Capacitance (F)
Interpixel Capacitance (F)
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
7
TCAD simulations for pixel detectors
Informations we would need :
-Details about the implant doping (i.e. details of
fabrication for process simulation)
-Geometry
Geometry pixel structure: metallization,
metallization interpixel dist
dist.
Etc.
Plans:
-3D
3D simulator for acurate interpixel capacitance
calculation
p bonding
g and read-out chip
p
-Add in simulator the bump
Otilia Militaru, Eduardo Cortina
Universite Catholique de Louvain,
BELGIQUE
8