ELECTRONIC Ph.D. OF THE UNIVERSITY OF LILLE

ELECTRONIC Ph.D. OF THE UNIVERSITY OF LILLE I
Presented and publicly defended on 13 November 1998 by
Pascal CHEVALIER
CONCEPTION AND REALIZATION OF AlInAs/GaInAs InP-BASED
FIELD EFFECT TRANSISTORS.
APPLICATION TO MILLIMETER-WAVE LOW-NOISE AMPLIFICATION.
JURY
E. CONSTANT
President, Professor at the University of Lille I (Villeneuve d'Ascq - France)
R. FAUQUEMBERGUE
Thesis director, Professor at the University of Lille I (Villeneuve d'Ascq - France)
D. PAVLIDIS
Rapporteur, Professor at the University of Michigan (USA)
M. ILEGEMS
Rapporteur, Professor at the Ecole Polytechnique Fédérale de Lausanne (Switzerland)
H. VERRIÈLE
Examiner, Engineer at the Délégation Générale pour l'Armement (Paris - France)
G. APERCÉ
Examiner, Engineer at Dassault Electronique (Saint Quentin en Yvelines - France)
A. CAPPY
Examiner, , Professor at the University of Lille I (Villeneuve d'Ascq - France)
X. WALLART
Examiner, Chargé de Recherches CNRS at IEMN (Villeneuve d'Ascq - France)
ABSTRACT:
Heterojunction-based field effect transistors, also called HEMT (High Electron Mobility Transistor), are requested for
development of millimeter-wave integrated circuits. In respond to very high frequency applications requirements, new III-V
materials systems are investigated. This report is concerned with the study of AlInAs/GaInAs InP-based HEMT. First,
foundations of these devices are presented and theoretical and experimental tools, used for this study, are introduced. Our
work was conducted on two purposes: technological development and improvement of epitaxial layers. Research on
technology was focused on T-gate E-beam lithography using trilayer resist system. They lead to the realization of software
able to simulate development process. Fabrication of 0.1-µm gate-length, low resistive, T-gate allowed to obtain state-of-theart device performance, with 250 GHz extrinsic cut-off frequency and 1.5 S/mm intrinsic transconductance. Works on
epilayer were intended to struggle against lattice-matched HEMT limitations. We pointed out the effect of GaInAs/InP
composite channel to decrease impact ionization phenomenon and so to enhance device performance. Power results of
GaInAs/InP/n+-InP composite channel HEMTs (355 mW/mm at 60 GHz) revealed capabilities of this kind of structure for
millimeter-wave power generation. In-house Monte-Carlo device simulator, taking into account technological parameters, was
developed for these studies. Finally, as part of a co-operation with Dassault Electronique company, we proved the suitability
of our 0.1-µm HEMT process for fabrication of low-noise monolithic amplifier at 60 GHz and 94 GHz.
KEYWORDS :
FIELD EFFECT TRANSISTOR
HEMT
HETEROSTRUCTURE
MMIC
MILLIMETER-WAVE
E-BEAM LITHOGRAPHY
LOW NOISE
POWER
LABORATORY ADDRESS :
INSTITUT D'ÉLECTRONIQUE ET DE MICRO-ÉLECTRONIQUE DU NORD - DÉPARTEMENT
HYPERFRÉQUENCE ET SEMI-CONDUCTEURS - CITÉ SCIENTIFIQUE - AVENUE POINCARÉ B.P. 69 59652 VILLENEUVE D'ASCQ CEDEX - FRANCE
Publications and communications: 1996-1998
PERIODICAL
P. CHEVALIER, X. WALLART, B. BONTE AND R. FAUQUEMBERGUE
“V-band high-power/low-voltage InGaAs/InP composite channel HEMTs”
Electronics Letters, 19th February 1998, Vol. 34, No. 4, pp. 409-411
INTERNATIONAL COMMUNICATIONS WITH PUBLICATION
F. DESSENNE, P. CHEVALIER, F. BANSE AND R. FAUQUEMBERGUE
“Monte-Carlo investigation of the influence of technological parameters on the performance of LM-HEMT on
Proceedings of 6th International Conference on Simulation of Devices and Technologies (ICSDT’98),
Cape Town (South Africa), 14-16 October 1998, pp. 113-116
P. CHEVALIER, X. WALLART, F. MOLLOT, B. BONTE AND R. FAUQUEMBERGUE
Proceedings of 10th IEEE International Conference on Indium Phosphide and Related Materials (IPRM’98),
Tsukuba (Japan), 11-15 May 1998, pp. 207-210
P. CHEVALIER, F. DESSENNE, M. BADIROU, J. L. THOBEL, R. FAUQUEMBERGUE
“Interest of 0.15 µm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers”
Proceedings of the 5th IEEE International Workshop on High Performance Electron Devices for Microwave and
Optoelectronic Applications (EDMO’97), London (UK), 24-25 November 1997, pp 193-198
NATIONAL COMMUNICATIONS WITHOUT PUBLICATION
P. CHEVALIER, F. DESSENNE, M. BADIROU, J. L. THOBEL, R. FAUQUEMBERGUE
“Impact of an InGaAs/InP composite channel on performance of 0.15 µm gate length HEMT’s on InP”
7th European Workshop on Heterostructure Technology (HETECH’97),
,14-16 September 1997
P. CHEVALIER, M. BADIROU, F. MOLLOT, X. WALLART, R. FAUQUEMBERGUE
“HEMT sur substrat InP de longueur de grille Lg=0,15 µm : comparaison entre un canal GaInAs et un canal
composite GaInAs/InP”
10èmes Journées Nationales Micro-ondes (JNM’97), Saint-Malo (France), 21-23 mai 1997, pp. 596-597
P. CHEVALIER
“Systèmes multicouches de résines en lithographie électronique : application à la réalisation de grille en T de
longueur Lg≤0,15 µm pour les HEMT”
4ème Journée du Réseau Doctoral en Microtechnologies, Besançon (France), 21 mars 1997, p. 9
P. CHEVALIER, E. DELOS, V. HÖEL, R. FAUQUEMBERGUE
“Amélioration des performances des HEMT AlInAs/GaInAs sur substrat InP réalisés en technologie nitrure de
longueur de grille Lg=0,15 µm”
6èmes Journées Nationales de Microélectronique et Optoélectronique III-V (JNMO’97), Chantilly (France),
29-31 janvier 1997, pp. 160-161
V. HÖEL, P. CHEVALIER, S. BOLLAERT, H. FOURRE, J.M. BELQUIN, S. LEPILLET, A. CAPPY
“Influence des capacités parasites liées à la technologie nitrure sur les performances de HEMT adapté en maille sur
InP de longueur de grille submicronique”
6èmes Journées Nationales de Microélectronique et Optoélectronique III-V (JNMO’97), Chantilly (France),
29-31 janvier 1997, pp. 164-165
P. CHEVALIER
“HEMT GaInAs/AlInAs sur substrat InP : composant pour l’amplification faible bruit en ondes millimétriques”
Doctoriales Sciences et Défense 1996, Fréjus (France), 29 septembre au 4 octobre 1996