Document Template

Titre: Required Information For Submitting
Databases to TELEDYNE DALSA Design &
Product Support.
Document Number: DES-0002.11
Création du document : December 22th, 2004
Bromont, Québec, Canada
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Database Submission Form
Please refer to DES-0001 “Terms and Conditions For Submitting Databases to
Product Foundry” Support for more information.
TELEDYNE DALSA Design and
Company Name:
Contact Name:
Contact Phone Number:
Contact Email Address:
Alternate Contact Name:
Alternate Contact Phone Number:
Alternate Contact Email Address:
DALSA Process Family Used:
Technology To Be Used :
CMOS
0.5um
Select the right process family.
Select the right technology
Chip 1
Customer Device Code :
GDSII File Name :
Top Structrure Name :
Chip 2
Customer Device Code :
GDSII File Name :
Top Structrure Name :
Chip 3
Customer Device Code :
GDSII File Name :
Top Structrure Name :
Special Data Generation Required ?
If Yes, Please explain:
No
Select the right option.
Magnification or Shrink Required?
If Yes, Please explain:
No
Select the right option.
Layout orientation change required?
If Yes, Please explain:
No
Select the right option.
Comments / Special Instructions
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
© Tous droits réservés 2011 / All rights reserved 2011 TELEDYNE DALSA Semiconducteur
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- Please provide the GDSII number (s), for each mask level or design aid layers in the tables below.
- Please indicate if the mask(s) need to be made or revised, indicated the Yes or No in column “Revised”.
- All GDSII numbers within the submitted database should be accounted for. Use the table provided in Varia Layer
Table to list any mask levels not present in the tables below or to list any design aid layers which should be used by
TELEDYNE DALSA to generate mask data.
- If a TELEDYNE DALSA Design Kit as be used, consult the GDSII chapter in the User Guide
document for specific tehnology.
CMOS / HV CMOS Layer Table
Mask
Level
Description
10
11
12
16
18
20
21
22
24
25
26
28
29
30
33
35
40
41
44
50
51
52
53
58
59
60
70
76
77
80
86
87
96
97
--
P-Well
N-Well
HV_Def
HV_Well
N-Base
Active Area
P-Field
N-Field
Vtn Adjust
Vtp Adjust
Vtp Adjust 2
P-Base
Poly Cap Hi Res
Poly Gate
P-Buried
Poly Gate Hi Res
N+ Diffusion
N- Extended
N-DDD or LDD Implant
P+ Diffusion
P-Extended
P-Top
Poly Cap
Poly 3
P-DDD / LDD Implant
Contacts
Metal 1
Vias 1
Metal 2
Pads
Vias 2
Metal 3
Vias3
Metal 4
DRL
--
HV Marker
GDSII
Number
Revised
(Yes / No)
Comments
© Tous droits réservés 2011 / All rights reserved 2011 TELEDYNE DALSA Semiconducteur
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CCD Layer Table
Mask
Level
02
10
11
12
20
23
27
28
29
30
31
32
35
40
41
43
50
51
52
53
54
55
56
57
58
59
60
61
65
70
75
76
77
80
83
84
85
86
87
90
95
96
97
99
Description
GDSII
Number
Revised
(Yes / No)
Comments
Zero
Well
Well 2 / Barrier 0
Well 3 / HV_Definition
Active Area
Poly 0
Buried Channel 1 Implant
Buried Channel 2 Implant
Channel Stop Implant
Poly1
AB Implant / Nitride Definition
Poly 1 Repair
Poly 1 HiRes
Source / Drain Implant
PPD Implant
PPD Implant 2
Top Side Contact Implant
PPD Implant 3
Barrier 1
Poly 2
Nitride Definition 3
Poly 2 Repair
Barrier 2
Buried Contact / Nitride Definition 2
Poly 3
Nitride on Poly
Contacts
Contacts 2
Poly 3 Repair
Metal 1
Metal Resistor
Vias 1
Metal 2 or Lightshield
Pads
Green Filter
Blue Filter
Red Filter
Vias 2
Metal 3
Flood
Microlens
Vias 3
Anti Reflective
Pads for Microlens
© Tous droits réservés 2011 / All rights reserved 2011 TELEDYNE DALSA Semiconducteur
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MEMS Layer Table
Mask
Level
01
02
04
05
06
10
11
12
13
15
16
17
18
19
20
21
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
47
48
50
52
53
54
55
56
57
58
60
61
64
70
74
75
Description
GDSII
Number
Revised
(Yes / No)
Comments
Marker
Zero
Clear Out
Locos 1
Locos 2
P-Well
N-Well / Buried Layer
HV_Defenition
Crystal Revealtant
Isolation
HV_Well
Trench
Nitride Etch 0
Nitride Etch 1
Active Area
P-Field
Vtn Adjust
Vtp Adjust
Vt Adjust 2
Trench 2 / Capacitor Implant
P-Base
Poly Cap Hi Res / Isolation
Poly Gate / Poly 1
Anchor 0
Poly 0
P-Buried
Dimple
Poly Gate Hi Res
Anchor 1
Poly 1
Mechanical Frame
Poly Via
N+ Diffusion
N- Extended
Anchor 2
Poly 2
Anchor 3
Poly 3
P+ Diffusion
P-Top / P- Resistor
Poly Cap / Poly 2
Bond Adjust
Diaphragm
Capacitor
SiCr Reistor
Poly Resistor / Barrier
Contacts
Contatcs 2
Waveguide / Grating
Metal 1
Etch Stop
Getter
© Tous droits réservés 2011 / All rights reserved 2011 TELEDYNE DALSA Semiconducteur
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Mask
Level
Description
76
77
80
82
84
85
86
87
88
90
94
95
96
97
99
Vias 1
Metal 2
Pads
Pads 2
Polarisation Compensation
Seal Ring
Vias 2
Metal 3
Open
Gold Bond Pad
Cap Cavity / Aluminium Reflective Coating
Cavity
Vias 3
Metal 4
HF_Shield
GDSII
Number
Revised
(Yes / No)
Comments
© Tous droits réservés 2011 / All rights reserved 2011 TELEDYNE DALSA Semiconducteur
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Varia Layer Table
Mask
Level
Description
GDSII
Number
Revised
(Yes / No)
Comments
© Tous droits réservés 2011 / All rights reserved 2011 TELEDYNE DALSA Semiconducteur